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RF and Microwave Modeling and Measurement Techniques for Compund Field Effect...

Description: RF and Microwave Modeling and Measurement Techniques for Compund Field Effect Transistors, Hardcover by Gao, Jianjun, ISBN 1891121898, ISBN-13 9781891121890, Like New Used, Free shipping in the US Gao presents a textbook for courses for senior undergraduate and first-year graduate students who have previously completed a basic course in electronic circuits. Field-effect transistors (FETs) extend the advantages of silicon transistors for much higher frequencies, where system-on-a-chip and similar technologies hang out these days, and he explains techniques for the accurate measurement with microwaves and radio frequencies that is needed to characterize devices operating at those wavelengths. Among the topics are representation of the microwave two-port network, FET small signal modeling and parameter extraction, FET nonlinear modeling and parameter extraction, and artificial neural network modeling techniques. Annotation ©2009 Book News, Inc., Portland, OR ()

Price: 122.42 USD

Location: Jessup, Maryland

End Time: 2024-12-27T11:22:43.000Z

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RF and Microwave Modeling and Measurement Techniques for Compund Field Effect...

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Book Title: RF and Microwave Modeling and Measurement Techniques for Compund

Author: Gao, Jianjun

Language: English

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