Description: Nanoscale CMOS by Francis Balestra Estimated delivery 3-12 business days Format Hardcover Condition Brand New Description This book provides a comprehensive review of the state-of-the-art in the development of new and innovative materials, and of advanced modeling and characterization methods for nanoscale CMOS devices.Leading global industry bodies including the International Technology Roadmap for Semiconductors (ITRS) have created a forecast of performance improvements that will be delivered in the foreseeable future - in the form of a roadmap that will lead to a substantial enlargement in the number of materials, technologies and device architectures used in CMOS devices. This book addresses the field of materials development, which has been the subject of a major research drive aimed at finding new ways to enhance the performance of semiconductor technologies. It covers three areas that will each have a dramatic impact on the development of future CMOS devices: global and local strained and alternative materials for high speed channels on bulk substrate and insulator; very low access resistance; and various high dielectric constant gate stacks for power scaling.The book also provides information on the most appropriate modeling and simulation methods for electrical properties of advanced MOSFETs, including ballistic transport, gate leakage, atomistic simulation, and compact models for single and multi-gate devices, nanowire and carbon-based FETs. Finally, the book presents an in-depth investigation of the main nanocharacterization techniques that can be used for an accurate determination of transport parameters, interface defects, channel strain as well as RF properties, including capacitance-conductance, improved split C-V, magnetoresistance, charge pumping, low frequency noise, and Raman spectroscopy. Publisher Description This book provides a comprehensive review of the state-of-the-art in the development of new and innovative materials, and of advanced modeling and characterization methods for nanoscale CMOS devices. Leading global industry bodies including the International Technology Roadmap for Semiconductors (ITRS) have created a forecast of performance improvements that will be delivered in the foreseeable future – in the form of a roadmap that will lead to a substantial enlargement in the number of materials, technologies and device architectures used in CMOS devices. This book addresses the field of materials development, which has been the subject of a major research drive aimed at finding new ways to enhance the performance of semiconductor technologies. It covers three areas that will each have a dramatic impact on the development of future CMOS devices: global and local strained and alternative materials for high speed channels on bulk substrate and insulator; very low access resistance; and various high dielectric constant gate stacks for power scaling. The book also provides information on the most appropriate modeling and simulation methods for electrical properties of advanced MOSFETs, including ballistic transport, gate leakage, atomistic simulation, and compact models for single and multi-gate devices, nanowire and carbon-based FETs. Finally, the book presents an in-depth investigation of the main nanocharacterization techniques that can be used for an accurate determination of transport parameters, interface defects, channel strain as well as RF properties, including capacitance-conductance, improved split C-V, magnetoresistance, charge pumping, low frequency noise, and Raman spectroscopy. Author Biography Francis Balestra is Director of the Laboratoire de Physique des Composants - Semiconducteurs (LPCS) at INP Grenoble in France. He has coauthored over 80 publications in international scientific journals and 120 communications at national and international conferences (20 invited papers and review articles). Details ISBN 1848211805 ISBN-13 9781848211803 Title Nanoscale CMOS Author Francis Balestra Format Hardcover Year 2010 Pages 652 Edition 1st Publisher ISTE Ltd and John Wiley & Sons Inc GE_Item_ID:137330936; About Us Grand Eagle Retail is the ideal place for all your shopping needs! With fast shipping, low prices, friendly service and over 1,000,000 in stock items - you're bound to find what you want, at a price you'll love! Shipping & Delivery Times Shipping is FREE to any address in USA. Please view eBay estimated delivery times at the top of the listing. Deliveries are made by either USPS or Courier. We are unable to deliver faster than stated. 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Price: 294.65 USD
Location: Fairfield, Ohio
End Time: 2025-01-25T06:28:36.000Z
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Restocking Fee: No
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Refund will be given as: Money Back
ISBN-13: 9781848211803
Book Title: Nanoscale CMOS
Number of Pages: 652 Pages
Publication Name: Nanoscale Cmos : Innovative Materials, Modeling and Characterization
Language: English
Publisher: Wiley & Sons, Incorporated, John
Subject: Electronics / Semiconductors, Nanotechnology & Mems
Item Height: 1.6 in
Publication Year: 2010
Type: Textbook
Item Weight: 39.1 Oz
Item Length: 9.4 in
Author: Francis Balestra
Subject Area: Technology & Engineering
Item Width: 6.4 in
Format: Hardcover
